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2N5114/5115/5116
P-Channel JFETs
Product Summary
Part Number
2N5114 2N5115 2N5116
VGS(off) (V)
5 to 10 3 to 6 1 to 4
rDS(on) Max (W)
75 100 150
ID(off) Typ (pA)
-10 -10 -10
tON Max (ns)
16 30 42
Features
D D D D D Low On-Resistance: 2N5114 <75 W Fast Switching--tON: 16 ns High Off-Isolation--ID(off): -10 pA Low Capacitance: 6 pF Low Insertion Loss
Benefits
D D D D D Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response Eliminates Additional Buffering
Applications
D D D D D Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters
Description
The 2N5114 series consists of p-channel JFET analog switches designed to provide low on-resistance, good off-isolation, and fast switching. These JFETs are optimized for use in complementary switching applications with the Siliconix 2N4856A series. The 2N5114 series is available with JAN, JANTX, or JANTXV level processing, (see 2N5114 JAN series data sheet).
TO-206AA (TO-18)
S 1
2 G Case Top View
3 D
Absolute Maximum Ratings
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -50 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . -55 to 200_C Lead Temperature (1/16" from case for 10 sec.) . . . . . . . . . . . . . . . 300_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW Notes a. Derate 3 mW/_C above 25_C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70260. Applications information may also be obtained via FaxBack, request document #70597.
Siliconix P-37410--Rev. D, 04-Jul-94
1
2N5114/5115/5116
Specificationsa
Limits
2N5114 2N5115 2N5116
Parameter Static
Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Currentd
Symbol
Test Conditions
Typb
Min
Max
Min
Max
Min
Max
Unit
V(BR)GSS VGS(off) IDSS IGSS IG
IG = 1 mA , VDS = 0 V VDS = -15 V, ID = -1 nA VGS = 0 V VDS = -18 V VDS = -15 V
45
30 5 -30 10 -90
30 3 -15 6 -60 500 1
30 1 -5 4 -25 500 1
V
mA pA mA
VGS = 20 V, VDS = 0 V TA = 150_C VDG = -15 V, ID = -1 mA VGS = 12 V VDS = -15 V VGS = 7 V VGS = 5 V VGS = 12 V VDS = -15 V 15 TA = 150 C 150_C VGS = 7 V VGS = 5 V ID = -15 mA
5 0.01 -5 -10 -10 -10 -0.02 -0.02 -0.02 -1.0 -0.7 -0.5
500 1 -500
-500 -500 -1 -1 -1 -1.3 -0.8 -0.6 75 100 -1 150 -1
pA
Drain Cutoff Current
ID( ff) D(off)
mA
Drain-Source On-Voltage Drain-Source On-Resistance Gate-Source Forward Voltage
VDS(on)
VGS = 0 V
ID = -7 mA ID = -3 mA
V
rDS(on) VGS(F)
VGS = 0 V, ID = -1 mA IG = -1 mA , VDS = 0 V -0.7
W V
-1
Dynamic
Common-Source Forward Transconductance d Common-Source Output Conductanced Drain-Source On-Resistance Common-Source Input Capacitance Common Source Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltaged gfs gos rds(on) Ciss VDS = -15 V, ID = -1 mA S f = 1 kHz 4.5 20 75 20 5 6 6 20 25 7 7 7 nV Hz 100 25 150 25 p pF mS mS W
VGS = 0 V, ID = 0 mA , f = 1 kHz VDS = -15 V, VGS = 0 V f = 1 MHz VGS = 12 V VDS = 0 V f = 1 MHz
Crss
VGS = 7 V VGS = 5 V
en
VDS = 10 V, ID = 10 mA f = 1 kHz
Switching
Turn-On Turn On Time Turn-Off Turn Off Time td(on) tr td(off) tf See Switching Circuit 6 10 6 15 10 20 8 30 12 30 10 50 PSCIA ns
Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v300 ms duty cycle v3%. d. This parameter not registered with JEDEC.
2
Siliconix P-37410--Rev. D, 04-Jul-94
2N5114/5115/5116
Typical Characteristics
200 rDS(on) - Drain-Source On-Resistance ( W )
On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage
IDSS
-100 g fs - Forward Transconductance (mS) I DSS - Saturation Drain Current (mA)
Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage
18 250 gfs and gos @ VDS = -15 V VGS = 0 V, f = 1 kHz 15 gfs 12 gos 150 200 g os - Output Conductance ( mS)
160 rDS
-80
120
-60
80
-40
9
100
40
rDS @ ID = -1 mA, VGS = 0 V IDSS @ VDS = -15 V, VGS = 0 V 0 2 4 6 8 10
-20
6
50
0 VGS(off) - Gate-Source Cutoff Voltage (V) 250 rDS(on) - Drain-Source On-Resistance ( W )
0
3 0 2 4 6 8 VGS(off) - Gate-Source Cutoff Voltage (V) 300 rDS(on) - Drain-Source On-Resistance ( W )
9
0 10
On-Resistance vs. Drain Current
TA = 25_C
On-Resistance vs. Temperature
ID = -1 mA rDS changes X 0.7%/_C
200
240
VGS(off) = 1.5 V
150 3V 5V 50
180
VGS(off) = 1.5 V 3V 5V
9
100
120
60
0 -1 -10 ID - Drain Current (mA) 50 -100
0 -55 -35 -15 5 25 45 65 85 105 125 TA - Temperature (_C) 20
Turn-On Switching
tr approximately independent of ID VDD = -10 V, RG = 220 W VGS(H) = 10 V, VGS(L) = 0 V Switching Time (ns)
Turn-Off Switching
tf VGS(off) = 1.5 V
40 Switching Time (ns)
16 5V 12 td(off) VGS(off) = 1.5 V 8 5V 4
30
tON @ ID = -5 mA
tON @ ID = -10 mA
20
10 tr @ ID = -5 mA 0 0 1 2 3 4 5 VGS(off) - Gate-Source Cutoff Voltage (V)
VDD = -10 V, VGS(H) = 10 V, VGS(L) = 0 V 0 0 -3 -6 -9 -12 -15 ID - Drain Current (mA)
Siliconix P-37410--Rev. D, 04-Jul-94
3
2N5114/5115/5116
Typical Characteristics (Cont'd)
-2
Output Characteristics
VGS = 0 V 1.5 V
-2
Output Characteristics
VGS = 0 V 0.2 V 0.4 V
-1.6 I D - Drain Current (mA)
0.5 V 1.0 V
-1.6 I D - Drain Current (mA) 0.6 V -1.2
-1.2 2.0 V -0.8
-0.8 0.8 V -0.4
-0.4 VGS(off) = 3 V 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 VDS - Drain-Source Voltage (V) -25
VGS(off) = 1.5 V 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 VDS - Drain-Source Voltage (V) -2 VGS = 0 V -1.6 3V
Output Characteristics
VGS(off) = 3 V VGS = 0 V I D - Drain Current (mA)
Output Characteristics
-20 I D - Drain Current (mA) 0.5 V -15 1.0 V -10 1.5 V -5 2.0 V 0 0 -4 -8 -12 -16 -20 VDS - Drain-Source Voltage (V)
-1.2 1V -0.8
2V 4V
-0.4 VGS(off) = 5 V 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 VDS - Drain-Source Voltage (V)
30
Capacitance vs. Gate-Source Voltage
VDS = 0 V f = 1 MHz
100 nA 10 nA
Gate Leakage Current
24 I G - Gate Leakage Capacitance (pF)
-1 mA 1 nA 100 pA 10 pA 1 pA 0.1 pA 0 4 8 12 16 20 0 -10 -20 -30 TA = 125_C
ID= -10 mA
18 Ciss 12 Crss 6
IGSS @ 125_C -10 mA TA = 25_C -1 mA IGSS @ 25_C
0 VGS - Gate-Source Voltage (V)
-40
-50
VDG - Drain-Gate Voltage (V)
4
Siliconix P-37410--Rev. D, 04-Jul-94
2N5114/5115/5116
Typical Characteristics (Cont'd)
Transfer Characteristics
-10 VGS(off) = 1.5 V -8 I D - Drain Current (mA) I D - Drain Current (mA) VDS = -15 V -32 -40
Transfer Characteristics
VGS(off) = 3 V VDS = -15 V
-6
TA = -55_C 25_C
-24
TA = -55_C 25_C
-4
-16
-2
125_C
-8 125_C
0 0 0.2 0.4 0.6 0.8 1.0 VGS - Gate-Source Voltage (V)
0 0 1 2 3 4 5 VGS - Gate-Source Voltage (V) 100 VGS(off) = 5 V VDS = -15 V
Transfer Characteristics
-80
Noise Voltage vs. Frequency
(nV / Hz)
-64 I D - Drain Current (mA)
ID = -0.1 mA
-48
e n - Noise Voltage
TA = -55_C 25_C
-1 mA 10
-32
-16 125_C 0 0 1 2 3 4 5
VDS = -10 V 1 10 100 1k 10 k 100 k
Switching Time Test Circuit
2N5114
VDD VGG RL* RG* ID(on) VGS(H) VGS(L) *Non-inductive -10 V 20 V 430 W 100 W -15 mA 0V -11 V
2N5115
-6 V 12 V 910 W 220 W -7 mA 0V -7 V
2N5116
-6 V 8V 2 kW 390 W -3 mA 0V -5 V 51 W VGS(H) VGS(L)
VGG
-VDD
1.2 kW
RL
0.1 mF
RG 7.5 kW 1.2 kW Sampling Scope 51 W 51 W
Input Pulse
Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz
Sampling Scope
Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF
See Typical Characteristics curves for changes.
Siliconix P-37410--Rev. D, 04-Jul-94
5

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